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Generally, current IGBTs are limited by the junction temperature, and the possibility of failure due to overheating tends to greatly increase unless the junction temperature is properly managed [1,2,3]. Recently, there have been numerous studies on methods for measuring the temperature of the IGBT indirectly by configuring the hardware to manage the junction temperature of the IGBT. One method measures temperature by attaching a negative temperature coefficient thermistor (NTC) near the junction. Most of the packaging modules provide a built-in NTC, but there is thermal resistance and thermal capacitance due to the physical separation distance, resulting in a difference from the junction temperature. Accordingly, correlation between the NTC temperature and the junction temperature is required [1,4]. Another method indirectly measures the junction temperature by monitoring the collector-emitter voltage during the on-state of the IGBT (i.e., the saturation voltage of IGBT). It is said rival stars betting party to occasionally consume human flesh, unlike their close cousins, the Almastis . Some witnesses reported seeing a rival stars betting party tail on the creature's corpse. In addition to the methods indirectly measuring the HW as described above, methods of estimating the junction temperature through thermal models have also been studied [6]. For this reason, in the field of mass-producing inverters for driving automobiles, to manage the junction temperature in real time when driving the inverter, the relationship between NTC and junction temperature is functionalized or tabled for various driving conditions to find the junction temperature. Due to the limitation of the memory of the inverter controller and the limitation of the time resource required to obtain experimental data, the area in which the junction temperature can be checked is limited to within a few hundred rpm compared to the operating range of the inverter for driving a vehicle from 12,000 to 20,000 rpm. Roma mobile.Regulamentação e Licença Internacional. Jogo Responsável.
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IGBT is also known as metal oxide insulated gate transistor (MOSIGT), conductivity-modulated field effect transistor (COMFET) or gain-modulated FET (GEMFET). It was initially called Insulated Gate Transistor (IGT). The p+ substrate is also called injector layer because it injects holes into n- layer. The n- layer is called drift region. The next p layer is called the body of IGBT. The n- layer in between the p+ & p region serves to accommodate the depletion layer of pn- junction i.e. J2. From the above figure, it is clear that as we move vertically up from collector to emitter, we come across p+, n-, p layers. This means that IGBT can be thought of as the combination of MOSFET and p + n – p transistor (Q 1 ). This is the basis for approximate equivalent circuit. Working Principle of IGBT: Current I C or I E comprises of two current components: Major current of collector current is electronic current I e i.e. main current path for collector, or load, current is through p+, n-, drift resistance R d and n-channel resistance R ch . This is shown in exact equivalent circuit. After applying positive voltage to gate with respect to emitter it will attract the electron from p region(body) as emitter and p(body) region at same potential (Zero) similar to working of MOSFET.
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