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Since bipolar power transistors offer a low-current gain, placing these bipolar transistors in high-voltage fields will significantly increase the size and weight of the designed circuit; by its nature, the cost of the system will be also escalated [1]. As an insulated-gate bipolar transistor (IGBT) is a combination of metal–oxide semiconductor field-effect transistor (MOSFET) and bipolar junction transistor (BJT), it has inherited the positive features of both the transistor and MOSFET [2]. For this reason, while designing a high-power circuit, much attention is paid to the correct choice of the IGBTs in accordance with the relevant application. Nevertheless, the designers should consider the practical limitations of the power semiconductor device and have a good understanding of all the operating details of the selected IGBT. Perhaps the most important characteristic that the designer should pay attention to is the electrical characteristics of the IGBT. Different performance characteristics curves are provided in the datasheet by the manufacturer, and with a closer look at them, it can be predicted that the selected IGBT is suitable for the desired application. Fc bordéus.E o melhor de tudo, oferecemos este serviço totalmente gratuito para ser usado quantas vezes quiser. Uma opção seria usar um cupom promocional sem um código de desconto, ou seja, através de um link específico que leva você a uma página especial em que os preços que você encontrará já são diretamente reduzidos exclusivamente para você.
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