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MOSFETs can also be divided into four categories: ④P-channel enhancement mode. The role of the Parasitic diode of MOSFET is to prevent the VDD over-voltage situation, burned MOSFET. Because the diode reverse breakdown before the over-voltage caused damage to the MOSFET, the high current directly to the ground, thus avoiding burning out the MOSFET. As a new type of electronic semiconductor device, IGBT has the characteristics of high input impedance, low power consumption for voltage control, simple control circuit, high voltage resistance, and high current withstand, etc. It is widely used in various electronic circuits. The body diode inside the IGBT is not parasitic but is specially set to protect the fragile reverse withstand voltage of the IGBT. It is also known as FWD (Freewheeling Diode). The internal structure of MOSFET and IGBT is shown in the figure below. IGBT ideal equivalent circuit. Mais de 0 5.Alguns lutadores não conseguem lidar com isso então, especialmente no Norte da Espanha e sua divisão online saiu para competir com bom serviço. Como acertar uma aposta na máquina para pro esporte.
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GATE Notes & Videos for Electrical Engineering. Network Theory (Electric Circuits) General Aptitude for GATE. GATE Notes & Videos for Electrical Engineering. Network Theory (Electric Circuits) 1 Crore+ students have signed up on EduRev. Have you? Test: IGBTs. More from Related Course. View courses related to this question. Choose the correct statement. A power transistor1. cannot be easily paralleled.2. is susceptible to secondary breakdown.3. has low transconductance than MOSFET.4. has negative temperature coefficient on collector current.5.

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