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All transistors, specially the BJT and the IGBT is actively protected (without any operating cost!) by sensing the Main Terminal voltage, as shown in Fig. 1.7. This voltage is related to the current carried by the device. Further, the transistors permit designed gate current waveforms to minimise voltage spikes as a consequence of sharply rising Main terminal currents. Gate resistances have significant effect on turn-on and turn-off times of these devices - permitting optimisation of switching times for the reduction of switching losses and voltage spikes. Protection schemes for over-voltages - the prolonged ones and those of short duration - are guided by the energy content of the surges. Metal Oxide Varistors (MOV's), capacitive dynamic voltage-clamps and crow-bar circuits are some of the strategies commonly used. For high dv/dt stresses, which again have similar effect on all devices, R-C or R-C-D clamps are used depending on the speed of the device. These 'snubbers' or 'switching-aid-networks', additionally minimise switching losses of the device - thus reducing its temperature rise. a) Highest switching speed; b) Highest voltage / current ratings; c) Easy drive features; d) Can be most effectively paralleled; e) Can be protected against over-currents with a fuse; f) Gate-turn off capability with regenerative features; g) Easy drive and High power handling capability. Academia das apostas de futebol pelo mundo.Jogo responsável: 18+. begambleaware.org.
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